Aluminium Nitride Substrate [MH-ZT-Aluminium Nitride]
Product Features
Introducing our high-performance Aluminum Nitride (AlN) Substrate, designed to meet the demands of advanced electronic and thermal management applications:
- Exceptional Thermal Conductivity: More than 7 times higher thermal conductivity than alumina, ensuring superior heat dissipation.
- Silicon-Compatible Thermal Expansion: Coefficient of thermal expansion close to that of silicon, providing high reliability for large silicon chip loading and thermal cycling.
- High Electrical Insulation: Features excellent electrical insulation properties with a low dielectric constant.
- Superior Mechanical Strength: Offers better mechanical strength than alumina for improved structural integrity in high-performance applications.
- Corrosion Resistance: Exhibits good corrosion resistance to molten metals, extending the life of components.
- High Purity and Safety: Non-toxic, with very few impurities, ensuring safety and purity in demanding environments.
硅兼容热膨胀：热膨胀系数接近硅，为大硅芯片负载和热循环提供高可靠性。
Applications
Aluminum Nitride substrates are ideal for:
- Heat Dissipation Substrates: Suitable for high-power electronics where efficient thermal management is essential.
- Substrate for LED Packaging: Ensures durability and performance for LED devices.
- Substrate for Semiconductors: Provides reliability and high thermal performance for semiconductor devices.
- Thin Film Circuit Substrate: Ideal for thin-film technology in advanced circuits.
- Substrate for Power Resistors: Designed for use in power resistor applications that require excellent heat dissipation.
Technical Highlights
- High Flexural Strength: With a flexural strength of 400 MPa and Young’s modulus of 320 GPa, it provides excellent mechanical stability.
- Low Thermal Expansion: Coefficient of thermal expansion is 4.3 x 10⁻⁶ at 20°~300°C, matching the needs of temperature-sensitive applications.
- High Breakdown Strength: Ensures electrical integrity with a breakdown strength of ≥15 Kv/mm and dielectric constant of 9 at 1 MHz.
Technical Specifications
| Parameter | Value |
|---|---|
| Material Number | AlN |
| Density (g/cm³) | 3.33 |
| Thermal Conductivity (25°C) W/(m.k) | ≥170 |
| Flexural Strength (MPa) | 400 |
| Young’s Modulus (GPa) | 320 |
| Vickers Hardness (GPa) | ≥11 |
| Fracture Toughness (MPa•√m) | 3.0 |
| Warpage (long edge) % | ≤2 |
| Surface Roughness (µm) | 0.2~0.6 |
| Coefficient of Thermal Expansion at 20°~300°C (10⁻⁶) | 4.3 |
| Coefficient of Thermal Expansion at 300°~800°C (10⁻⁶) | 5.0 |
| Breakdown Strength (Kv/mm) | ≥15 |
| Dielectric Constant (1 MHz) | 9 |
| Volume Resistivity (20°C, Ω•cm) | ≥10¹⁴ |
